1) Which capacitance/s in hybrid π model represent/s the storage of excess minority carriers at the base emitter junction?
a. Diffusion capacitance
b. Transition capacitance
c. Both a and b
d. None of the above
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Answer
Explanation
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ANSWER: Diffusion capacitance
Explanation:
No explanation is available for this question!
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2) Consider a single stage CE amplifier is estimated to possess the bandwidth of about 2MHz in addition to the resistive load of 500 ohm. What should be the value of source resistance in order to get the required bandwidth for the hybrid π equivalent circuit in accordance to the transistor assumptions given below?
hfe = 100, gm = 30 mA , r'bb = 80Ω, Cc = 3pF, fT = 200MHz, Ce = 20pF, fH = 5MHz, r' be = 2kΩ
a. 497.4 Ω
b. 531.15 Ω
c. 731.04 Ω
d. 900 Ω
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Answer
Explanation
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ANSWER: 531.15 Ω
Explanation:
No explanation is available for this question!
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3) What should be the value of unity gain frequency for a short circuit CE transistor with gain of 30 at 4MHz and cut-off frequency of about 100 kHz?
a. 40 MHz
b. 80 MHz
c. 120 MHz
d. 150 MHz
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Answer
Explanation
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ANSWER: 120 MHz
Explanation:
No explanation is available for this question!
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4) Miller's theorem is applicable in a single stage CE hybrid π model in order to deal with ________
a. Series combination of C C and r' bc
b. Series combination of C e and r' be
c. Parallel combination of C C and r' bc
d. Parallel combination of C e and r' be
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Answer
Explanation
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ANSWER: Parallel combination of CC and r'bc
Explanation:
No explanation is available for this question!
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5) Which among the following will possess a higher bandwidth, if two transistors are provided with unity gain frequency?
a. Transistor with lower h fe
b. Transistor with higher h fe
c. Transistor with lower h re
d. Transistor with higher h re
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Answer
Explanation
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ANSWER: Transistor with lower hfe
Explanation:
No explanation is available for this question!
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6) Which among the following represents the frequency at which short circuit CE current gain acquires unit magnitude?
a. f α
b. f β
c. f T
d. None of the above
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Answer
Explanation
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ANSWER: fT
Explanation:
No explanation is available for this question!
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7) The cut-off frequency (fβ) is basically the frequency at which the short circuit __________
a. CB gain of transistor drops by 3 dB from its value at low frequency
b. CE gain of transistor drops by 3 dB from its value at low frequency
c. CC gain of transistor drops by 3 dB from its value at low frequency
d. None of the above
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Answer
Explanation
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ANSWER: CE gain of transistor drops by 3 dB from its value at low frequency
Explanation:
No explanation is available for this question!
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8) Which among the below specified parameters exhibit inverse relationship with an input conductance of hybrid π model?
a. Temperature at constant h fe
b. Current at constant h fe
c. Voltage at constant h re
d. Resistivity at constant h re
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Answer
Explanation
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ANSWER: Temperature at constant hfe
Explanation:
No explanation is available for this question!
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9) Which among the following plays a cardinal role in providing the transition capacitance in hybrid π model?
a. Forward biased base-emitter junction
b. Reverse-biased collector base junction
c. Forward biased collector base junction
d. Reverse-biased base-emitter junction
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Answer
Explanation
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ANSWER: Reverse-biased collector base junction
Explanation:
No explanation is available for this question!
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10) Which resistance in hybrid π model of transistor represents the bulk resistance present between the external base terminal and the virtual base?
a. Collector-to-emitter resistance (r ce)
b. Base spreading resistance (ŕ bb)
c. Virtual base to emitter resistance (ŕ be)
d. None of the above
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Answer
Explanation
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ANSWER: Base spreading resistance (ŕbb)
Explanation:
No explanation is available for this question!
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